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Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
* * * * * * * * * * * * * * * *
Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient deadtime 15.6V zener clamped Vcc for offline operation Half-bridge output is out of phase with RT True micropower startup Shutdown feature (1/6th VCC) on CT lead Increased undervoltage lockout hysteresis (1Volt) Lower power level-shifting circuit Lower di/dt gate drive for better noise immunity Excellent latch immunity on all inputs and outputs ESD protection on all leads Constant VO pulse width at startup Heatsink package version (P2 type)
Product Summary
VIN (max) Duty Cycle Deadtime (type.) Rds(on) 500V 50% 1.2s 3.0
PD (TA = 25oC) 2.0W or 3.0W
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed, self-oscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays
7 Pin Lead SIP
for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to the VIN (max) rating.
Typical Connection
HV DC Bus VIN IR53H(D)420(-P2)
D1
1
Vcc
VB
6
External Fast recovery diode D1 is not required for HD type
2 RT 3 CT 4
RT
VIN
9
CT
VO
7
COM
TO, LOAD
COM
IR53H(D)420(-P2)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, unless stated otherwise. All currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol
VIN VB VO VRT VCT Icc IRT dV/dt PD RthJA RthJC TJ TS TL
Definition
High voltage supply High side floating supply Half-bridge output RT voltage CT voltage Supply current (note 1) RT output current Peak diode recovery Package power dissipation @ TA +25C -P2 Thermal resistance, junction to ambient Thermal resistance, junction to case (heatsink) Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) -P2 -P2
Minimum
- 0.3 Vo - 0.3 -0.3 - 0.3 - 0.3 -- -5 -- -- -- -- -- -- -55 -55 --
Maximum
500 Vo + 25 VIN + 0.3 Vcc + 0.3 Vcc + 0.3 25 5 3.50 2 3 60 40 20 150 150 300
Units
V
mA V/ns W
oC/W
C
NOTE 1: This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics Section
2
IR53H(D)420(-P2)
Recommended Component Values
Symbol
RT CT CT pin capacitor value
Definition
Timing resistor value
Minimum
10 330
Maximum
-- --
Units
k pF
IR53H(D)420(-P2) RT vs Frequency IR2153 RT vs Frequency
1000000
100000
Frequency (Hz)
10000
330pf 470pF 1nF
CT Values
1000
2.2nF 4.7nF 10nF
100
10 10 100 1000 RT (ohms) 10000 100000 1000000
3
IR53H(D)420(-P2)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions. Symbol
VB VIN VO ID
Definition
High side floating supply absolute voltage High voltage supply Half-bridge output voltage Continuous drain current (TA = 25C) -P2 (TA = 85C) -P2 (TC = 25C) -P2
Minimum
Vo + 10 -- -3.0 (note 3) -- -- -- -- -- (note 3) -40
Maximum
Vo + V clamp 500 500 0.7 0.85 0.5 0.6 1.2 5 125
Units
V
A
ICC TA
Supply current Ambient temperature
mA C
NOTE 2: Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V. NOTE 3: Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the voltage at this lead.
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and I IN parameters are referenced to COM.
MOSFET Characteristics
Symbol Definition
trr Qrr Rds(on) VSD Reverse recovery time (MOSFET body diode) Reverse recovery charge (MOSFET body diode) Static drain-to-source on resistance Diode forward voltage
Min.
-- -- -- --
Typ.
240 0.5 3.0 0.8
Max. Units Test Conditions
-- -- -- -- C V
di/dt =
IF=700mA 100
A/s
Dynamic Characteristics
Symbol Definition
D tsd RT duty cycle Shutdown propagation delay
Min.
-- --
Typ.
50 660
Max. Units Test Conditions
-- -- % nsec fosc = 20 kHz
4
IR53H(D)420(-P2)
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage
Min.
8.1 7.2 0.5 -- -- 14.4
Typ.
9.0 8.0 1.0 75 500 15.6
Max.
9.9 8.8 1.5 150 950 16.8
Units Test Conditions
V A V VCC VCCUVICC = 5mA
Floating Supply Characteristics
Symbol Definition
IQBSUV IQBS VBSMIN IOS VF Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Bootstrap diode forward voltage (IR2153D)
Min.
-- -- -- -- 0.5
Typ.
0 30 4.0 -- --
Max.
10 50 5.0 50 1.0
Units
A V A V
Test Conditions
VCC VCCUVV CC=VCCUV+ + 0.1V VB = VS = 600V IF = 250mA
Oscillator I/O Characteristics
Symbol Definition
fosc d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper C T ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level R T output voltage, V CC - VRT Low-level RT output voltage UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT
Min.
19.4 94 48 -- 0.30 -- -- 1.8 -- -- -- -- -- -- --
Typ.
20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 10
Max.
20.6 106 52 1.0 1.2 -- -- 2.4 50 300 50 300 100 50 300
Units Test Conditions
kHz % uA mA V IRT = 100A IRT = 1mA IRT = 100A IRT = 1mA VCC VCCUVIRT = 100A, VCT = 0V IRT = 1mA, VCT = 0V RT = 36.9k RT = 7.43k fo < 100kHz VCC = 7V
mV
5
IR53H(D)420(-P2)
Functional Block Diagram
V D1
B
VIN 6 9
1 Vcc H 2 R
T O
IRFCXXX
IR2153 C
V
S
7 VO
L 3 C
T
O
IRFCXXX
4 COM Fast recovery diode D1 is incorporated in IR53HDXXX only
6
IR53H(D)420(-P2)
Case Outline - 7 pin
4X 5.08 (.100) 2X
16.89 (.665) 16.63 (.655)
3.18 (.125) 2.92 (.115)
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches)
7
IR53H(D)420(-P2)
Lead Assignments
1 2 3 4 Vcc RT CT COM 6 7 9 VB VO VIN
9 6 1 2 3 4 7
9 Lead SIP without Leads 5 and 8
Lead Definitions
Symbol
VCC RT CT VB VIN VO COM
Lead Description
Logic and internal gate drive supply voltage. Oscillator timing resistor output Oscillator timing capacitor input High side gate drive floating supply. High voltage supply Half Bridge output Logic and low side of half bridge return
Vccuv+
V CLAMP
Vcc
RT CT V+
VO
0
Figure 1. Input/Output Timing Diagram
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